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APTGF200U120D
Single Switch with Series diodes NPT IGBT Power Module
EK E C
VCES = 1200V IC = 200A @ Tc = 80C
Application * Zero Current Switching resonant mode Features * Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile
G
CK
E CK
C
EK G
Absolute maximum ratings
Symbol VCES IC ICM VGE PD SSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C
Max ratings 1200 275 200 600 20 1136 600A @ 1200V
Unit V A V W
APTGF200U120D - Rev 0 July, 2004
Switching Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
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APTGF200U120D
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Eon Eoff Td(on) Tr Td(off) Tf Eon Eoff Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V, IC = 1.5mA Tj = 25C VGE = 0V VCE = 1200V Tj = 125C Tj = 25C VGE =15V IC = 200A Tj = 125C VGE = VCE, IC = 4mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz VGS = 15V VBus = 600V IC = 200A Inductive Switching (125C) VGE = 15V VBus = 600V IC = 200A R G = 1.2 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 200A R G = 1.2 Min
1200
Typ
Max 1.5
Unit V mA V V nA Unit nF
7.0 3.2 4.0 4.5
3.7 6.5 300
Dynamic Characteristics
Min
Typ 13.8 1.32 880 1320 140 800 35 65 320 30 21.6 9.2 35 65 360 40 27.9 12.2
Max
nC
ns
mJ
Series diode ratings and characteristics
Symbol Characteristic VRRM IF(A V) VF
Maximum Repetitive Reverse Voltage
Test Conditions
50% duty cycle
Min 1200 Tc = 70C
Typ 240 2 2.3 1.8 400 470 4.8 16
Max
Unit A
Maximum Average Forward Current Diode Forward Voltage
IF = 240A IF = 480A IF = 240A IF = 240A VR = 800V di/dt =800A/s IF = 240A VR = 800V di/dt =800A/s
2.5 V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Qrr
Reverse Recovery Charge
C
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APTGF200U120D - Rev 0 July, 2004
trr
Reverse Recovery Time
ns
APTGF200U120D
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.11 0.23 150 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Package outline
APT website - http://www.advancedpower.com
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APTGF200U120D - Rev 0 July, 2004
APTGF200U120D
Typical Performance Curve
800 Ic, Collector Current (A) Output characteristics (VGE=15V)
250s Pulse Test < 0.5% Duty cycle
200
Ic, Collector Current (A)
Output Characteristics (VGE=10V)
250s Pulse Test < 0.5% Duty cycle
TJ =25C
600
150
TJ =25C
400 TJ =125C 200
100
T J=125C
50
0 0 2 4 6 VCE, Collector to Emitter Voltage (V) Transfer Characteristics VGE, Gate to Emitter Voltage (V)
250s Pulse Test < 0.5% Duty cycle
0
8
0
1 2 3 VCE, Collector to Emitter Voltage (V)
Gate Charge
4
1200
Ic, Collector Current (A)
18 16 14 12 10 8 6 4 2 0 0 200 400 IC = 200A T J = 25C
VCE=240V VCE=600V
1000 800 600 400 200 0 0
VCE =960V
TJ =125C TJ =25C 4 8 12 VGE, Gate to Emitter Voltage (V) 16
600
800
1000 1200 1400
Gate Charge (nC) On state Voltage vs Junction Temperature
250s Pulse Test < 0.5% Duty cycle VGE = 15V
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
9 8 7 6 5 4 3 2 1 0 9
On state Voltage vs Gate to Emitter Volt.
TJ = 25C 250s Pulse Test < 0.5% Duty cycle
6 5 4 3 2 1 0
Ic=400A Ic=200A
Ic=400A
Ic=200A
Ic=100A
Ic=100A
10 11 12 13 14 15 VGE, Gate to Emitter Voltage (V)
Breakdown Voltage vs Junction Temp.
16
-50
-25 0 25 50 75 100 TJ, Junction Temperature (C)
125
Collector to Emitter Breakdown Voltage (Normalized)
Ic, DC Collector Current (A)
1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 TJ, Junction Temperature (C) 125
350 300 250 200
DC Collector Current vs Case Temperature
100 50 0 -50 -25 0 25 50 75 100 125 150 TC , Case Temperature (C)
APT website - http://www.advancedpower.com
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APTGF200U120D - Rev 0 July, 2004
150
APTGF200U120D
Turn-On Delay Time vs Collector Current VCE = 600V RG = 1.2
VGE = 15V
Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns)
td(on), Turn-On Delay Time (ns)
45
400
VGE=15V, TJ=125C
40
350
35
300
VGE=15V, TJ =25C
30
250
25 0 100 200 300 400 500 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current
VCE = 600V RG = 1.2 0 100 200
200 300 400 500
ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current
180 VCE = 600V RG = 1.2
tf, Fall Time (ns)
50 TJ = 125C 40
tr, Rise Time (ns)
140
100 VGE=15V
30 TJ = 25C VCE = 600V, VGE = 15V, RG = 1.2 20
60
20 0 100 200 300 400 ICE, Collector to Emitter Current (A) 500
0
100 200 300 400 ICE, Collector to Emitter Current (A)
500
Eon, Turn-On Energy Loss (mJ)
100 80 60 40 20 0 0
VCE = 600V RG = 1.2
Eoff, Turn-off Energy Loss (mJ)
120
Turn-On Energy Loss vs Collector Current
Turn-Off Energy Loss vs Collector Current
32 VCE = 600V VGE = 15V RG = 1.2 TJ = 125C
T J=125C, VGE=15V
24
16
TJ=25C, VGE =15V
TJ = 25C
8
0 0 100 200 300 400 500 ICE, Collector to Emitter Current (A)
100 200 300 400 500 ICE, Collector to Emitter Current (A)
Switching Energy Losses (mJ)
64 56 48 40 32 24 16 8 0 0
VCE = 600V VGE = 15V T J= 125C
Switching Energy Losses (mJ)
Switching Energy Losses vs Gate Resistance 72
Eon, 200A
32
Switching Energy Losses vs Junction Temp.
VCE = 600V VGE = 15V R G = 1.2 Eon, 200A
24
Eoff, 200A
16
Eon, 100A
8
Eon, 100A Eoff, 100A
Eoff, 100A
0 2.5 5 7.5 10 Gate Resistance (Ohms) 12.5 0 25 50 75 100 TJ, Junction Temperature (C) 125
APT website - http://www.advancedpower.com
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APTGF200U120D - Rev 0 July, 2004
Eoff, 200A
APTGF200U120D
Capacitance vs Collector to Emitter Voltage 100000 Cies 10000 IC , Collector Current (A) Minimum Switching Safe Operating Area 700 600 500 400 300 200 100 0 0 400 800 1200 VCE, Collector to Emitter Voltage (V)
C, Capacitance (pF)
Coes 1000 Cres 100 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 50
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 Thermal Impedance (C/W) 0.1 0.08 0.06 0.04 0.02 0 0.00001 0.9 0.7 0.5 0.3 0.1 0.05 0.0001
Single Pulse 0.001 0.01 0.1 1
Rectangular Pulse Duration (Seconds) Operating Frequency vs Collector Current 120 100 80 60 40 20 0 20 60 100 140 180 IC, Collector Current (A) 220
Hard switching ZCS V CE = 600V D = 50% RG = 1.2 TJ = 125C TC = 75C
Fmax, Operating Frequency (kHz)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGF200U120D - Rev 0 July, 2004

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